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Volumn E87-C, Issue 10, 2004, Pages 1679-1685

Multiple programming method and circuitry for a phase change nonvolatile random access memory (PRAM)

(4) Takata, Masashi a Nakayama, Kazuya a Kasai, Toshihiko a Kitagawa, Akio a

Author keywords

Multi bit; NVRAM; OUM; Phase change

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER ARCHITECTURE; COMPUTER PROGRAMMING; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; PHASE SHIFT; SEMICONDUCTING ORGANIC COMPOUNDS;

CELL ARRAY ARCHITECTURE; CHALOGENIDE SEMICONDUCTORS; MULTIPLE PROGRAMMING METHOD; PHASE CHANGE RANDOM ACCESS MEMORY (PRAM);

RANDOM ACCESS STORAGE;

EID: 7544237670 PISSN: 09168524 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.