메뉴 건너뛰기




Volumn 10, Issue 4, 2004, Pages 759-765

ITO-schottky photodiodes for high-performance detection in the UV-IR spectrum

Author keywords

Heterostructure; High performance; III V alloys; Indium tin oxide (ITO); Photodiode; Resonant cavity; Schottky

Indexed keywords

BANDWIDTH; CARRIER COMMUNICATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; FABRICATION; HETEROJUNCTIONS; INDIUM COMPOUNDS; INFRARED SPECTROGRAPHS; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SPECTRUM ANALYSIS; ULTRAVIOLET DETECTORS;

EID: 7544233111     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.833977     Document Type: Article
Times cited : (29)

References (18)
  • 1
    • 0034313047 scopus 로고    scopus 로고
    • Optodectronic devices based on III-V compound semi-conductors which, have made a major scientific and technological impact in the past 20 years
    • M. Razeghi, "Optodectronic devices based on III-V compound semi-conductors which, have made a major scientific and technological impact in the past 20 years," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 1344-1354, 2000.
    • (2000) IEEE J. Select. Topics Quantum Electron. , vol.6 , pp. 1344-1354
    • Razeghi, M.1
  • 4
    • 5344223935 scopus 로고
    • Resonant cavity enhanced (RCE) pnotonic devices
    • M. S. Unlu and S. Strite, "Resonant cavity enhanced (RCE) pnotonic devices," J. Appl. Phys. Rev., vol. 78, pp. 607-639, 1995.
    • (1995) J. Appl. Phys. Rev. , vol.78 , pp. 607-639
    • Unlu, M.S.1    Strite, S.2
  • 5
    • 0032666653 scopus 로고    scopus 로고
    • Ultrawide-band/high-frquency photodetectors
    • K. Kato, "Ultrawide-band/high-frquency photodetectors,'' IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1265-1281, 1999.
    • (1999) IEEE Trans. Microwave Theory Tech. , vol.47 , pp. 1265-1281
    • Kato, K.1
  • 12
    • 0026627675 scopus 로고
    • Thermal stability of indium-tin-oxide/n-GaAs Schottky diodes
    • Y. H. Aliyu, D. V. Morgan, and R. W. Bunce, "Thermal stability of indium-tin-oxide/n-GaAs Schottky diodes," Electron. Lett., vol. 28, pp. 142-144, 1992.
    • (1992) Electron. Lett. , vol.28 , pp. 142-144
    • Aliyu, Y.H.1    Morgan, D.V.2    Bunce, R.W.3
  • 13
    • 0023647202 scopus 로고
    • 110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs
    • D. G. Parker, P. G. Say, and A. M. Hansom, "110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs," Electron. Lett., vol. 23, pp. 527-528, 1987.
    • (1987) Electron. Lett. , vol.23 , pp. 527-528
    • Parker, D.G.1    Say, P.G.2    Hansom, A.M.3
  • 16
    • 0035934857 scopus 로고    scopus 로고
    • Highspeed visible-blind GaN-based indium-tin-oxide Schottky photodiodes
    • N. Biyikli, T. Kartaloglu, O. Aytur, I. Kimukin, and E. Ozbay, "Highspeed visible-blind GaN-based indium-tin-oxide Schottky photodiodes," Appl. Phys. Lett., vol. 79, pp. 2838-2840, 2001.
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 2838-2840
    • Biyikli, N.1    Kartaloglu, T.2    Aytur, O.3    Kimukin, I.4    Ozbay, E.5
  • 17
    • 0344080456 scopus 로고    scopus 로고
    • Highspeed solar-blind photodetectors with indium-tin-oxide Schottky contacts
    • N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, and E. Ozbay, "Highspeed solar-blind photodetectors with indium-tin-oxide Schottky contacts," Appl. Phys. Lett., vol. 82, pp. 2344-2346, 2003.
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 2344-2346
    • Biyikli, N.1    Kimukin, I.2    Kartaloglu, T.3    Aytur, O.4    Ozbay, E.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.