Theoretical study of defect structures in pure and titanium-doped alumina

Solid State Ionics

Volumn 172, Issue 1-4 SPEC. ISS., 2004, Pages 155-158

  Matsunaga, K ^a   Nakamura, A ^a   Yamamoto, T ^a   Ikuhara, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Alumina; Defect level; Defect reaction; Formation energy; Titanium

Indexed keywords

ALUMINA; CERAMIC MATERIALS; DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; SCHOTTKY BARRIER DIODES; SUBSTITUTION REACTIONS;

BAND GAP; DEFECT LEVEL; DEFECT REACTION; FORMATION ENERGY;

TITANIUM COMPOUNDS;

EID: 7544220910     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2004.01.044     Document Type: Conference Paper

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