메뉴 건너뛰기




Volumn 114, Issue 2, 2010, Pages 1218-1223

Structures and electronic properties of beryllium atom encapsulated in Sin (0,-1) (n = 2-10) clusters

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BERYLLIUM; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC PROPERTIES; GROUND STATE; SILICON;

EID: 75249104479     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp910326a     Document Type: Article
Times cited : (30)

References (31)
  • 29
    • 75249084507 scopus 로고    scopus 로고
    • Frisch, M. J, Trucks, G. W, Schlegel, H. B, Scuseria, G. E, Robb, M. A, Cheeseman, J. R, Montgomery, J. A, Jr, Vreven, T, Kudin, K. N, Burant, J. C, Millam, J. M, Iyengar, S. S, Tomasi, J, Barone, V, Mennucci, B, Cossi, M, Scalmani, G, Rega, N, Petersson, G. A, Nakatsuji, H, Hada, M, Ehara, M, Toyota, K, Fukuda, R, Hasegawa, J, Ishida, M, Nakajima, T, Honda, Y, Kitao, O, Nakai, H, Klene, M, Li, X, Knox, J. E, Hratchian, H. P, Cross, J. B, Bakken, V, Adamo, C, Jaramillo, J, Gomperts, R, Stratmann, R. E, Yazyev, O, Austin, A. J, Cammi, R, Pomelli, C, Ochterski, J. W, Ayala, P. Y, Morokuma, K, Voth, G. A, Salvador, P, Dannenberg, J. J, Zakrzewski, V. G, Dapprich, S, Daniels, A. D, Strain, M. C, Farkas, O, Malick, D. K, Rabuck, A. D, Raghavachari, K, Foresman, J. B, Ortiz, J. V, Cui, Q, Baboul, A. G, Clifford, S, Cioslowski, J, Stefanov, B. B, Liu, G, Liashenko, A, Piskorz, P, Komaromi, I, Martin, R. L, Fox, D. J, Keit
    • Frisch, M. J.; Trucks, G. W.; Schlegel, H. B.; Scuseria, G. E.; Robb, M. A.; Cheeseman, J. R.; Montgomery, J. A., Jr.; Vreven, T.; Kudin, K. N.; Burant, J. C.; Millam, J. M.; Iyengar, S. S.; Tomasi, J.; Barone, V.; Mennucci, B.; Cossi, M.; Scalmani, G.; Rega, N.; Petersson, G. A.; Nakatsuji, H.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Klene, M.; Li, X.; Knox, J. E.; Hratchian, H. P.; Cross, J. B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R. E.; Yazyev, O.; Austin, A. J.; Cammi, R.; Pomelli, C.; Ochterski, J. W.; Ayala, P. Y.; Morokuma, K.; Voth, G. A.; Salvador, P.; Dannenberg, J. J.; Zakrzewski, V. G.; Dapprich, S.; Daniels, A. D.; Strain, M. C.; Farkas, O.; Malick, D. K.; Rabuck, A. D.; Raghavachari, K.; Foresman, J. B.; Ortiz, J. V.; Cui, Q.; Baboul, A. G.; Clifford, S.; Cioslowski, J.; Stefanov, B. B.; Liu, G.; Liashenko, A.; Piskorz, P.; Komaromi, I.; Martin, R. L.; Fox, D. J.; Keith, T.; Al-Laham, M. A.; Peng, C. Y.; Nanayakkara, A.; Challacombe, M.; Gill, P. M. W.; Johnson, B.; Chen, W.; Wong, M. W.; Gonzalez, C.; Pople, J. A. Gaussian 03, revision C.02; Gaussian, Inc.: Wallingford, CT, 2004.
  • 30
    • 75249095762 scopus 로고    scopus 로고
    • For Sin (n, 2-7) clusters, the ground-state structures confirmed by theoretical and experimental schemes are line for Si2, isosceles triangle for Si3, rhombus for Si4, trigonal bipyramid for Si5, tetragonal bipyramid for Si6, and pentagonal bipyramid for Si7. Many calculations showed that the lowest-energy geometry of Si8,Si9, and Si10 are distorted bicapped octahedron, bicapped pentagonal bipyramid, and tetracapped trigonal prism, respectively, See refs 1-12, For anions Sin, n, 2-10, the ground-state geometries resemble those of corresponding neutral with the exception of Si8-and Si9-The anion Si8-is C3v symmetry, The neutral Si8 is C2h symmetry, The anion Si9-is distorted tricapped trigonal prism
    • -is distorted tricapped trigonal prism.
  • 31
    • 75249096602 scopus 로고    scopus 로고
    • n (n = 2-10) are calculated to be 0.042 eV.
    • n (n = 2-10) are calculated to be 0.042 eV.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.