A study on the removal of silicon native oxide for ULSI devices

Proceedings - KORUS 2000: 4th Korea-Russia International Symposium on Science and Technology

Volumn 3, Issue , 2000, Pages 381-387

  Choi, Song Ho ^a   Jeong, Kwang Jin ^b   Choi, Jin Sik ^a   Koo, Kyong Wan ^c   Cho, Tong Yul ^d   Chun, Hui Gon ^d  

^a KoMiCo   (South Korea)

^b Sunic System Ltd   (South Korea)

^c Div of Electronic Engineering   (South Korea)

^d University of Ulsan   (South Korea)

Author keywords

Kelvin resistance; Silicon Native Oxide; UV excited

Indexed keywords

DRY CLEANING; ETCHING; OXIDE FILMS; SILICON;

CONTACT HOLES; ETCHING MECHANISM; KELVIN RESISTANCE; SELECTIVE ETCHING; SILICON NATIVE OXIDES; THERMAL OXIDE FILMS; ULSI DEVICES; UV-EXCITED;

SILICON WAFERS;

EID: 75149163598     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/KORUS.2000.866118     Document Type: Conference Paper

References (3)

1. W. Ken, Handbook of Semiconductor Wafer Cleaning Tech., NOYES Pub., 1993
2. T. Ito, R, Sugino, S. Watanabe, Y. Nara and Y. Sato, UV-Enhanced Drycleaning of Silicon Wafer, Procee. of the 1st Int. Symposium on Cleaning Tech. Device Manufacturing, 114-120, 1989
3. J. Kikuchi, M. Nagasaka, S. Fusimura, H. Yano and Y. Horiike, Cleaning of Silicon Surfaces by NF3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment, Jpn. J. Appl. Phys., Vol. 35, 1022-1026, 1996