High-pressure crystal growth and magnetic and electrical properties of the quasi-one dimensional osmium oxide Na2OsO4

Journal of Solid State Chemistry

Volumn 183, Issue 2, 2010, Pages 402-407

  Shi, Y G ^a,b   Guo, Y F ^a,b   Yu, S ^a,b   Arai, M ^a   Belik, A A ^a,b   Sato, A ^a   Yamaura, K ^a,b,c   Takayama Muromachi, E ^a,b,c   Varga, T ^d   Mitchell, J F ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

^d ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Ca2IrO4; High pressure synthesis; Osmium oxides

Indexed keywords

BAND STRUCTURE CALCULATION; CA2IRO4; ELECTRICAL RESISTIVITY; ELECTRONIC CONFIGURATION; FLUX METHODS; HIGH PRESSURE; HIGH PRESSURE SYNTHESIS; MAGNETIC AND ELECTRICAL PROPERTIES; METAL VACANCIES; NONMAGNETICS; OCTAHEDRAL ENVIRONMENT; QUASI-ONE DIMENSIONAL; SPECIFIC HEAT MEASUREMENT; STRUCTURE ANALYSIS; TYPE STRUCTURES; UNI-AXIAL COMPRESSION;

CALCIUM; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; OSMIUM; SODIUM CHLORIDE; SYNTHESIS (CHEMICAL); THERMAL VARIABLES MEASUREMENT;

SODIUM;

EID: 75149114576     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2009.12.007     Document Type: Article

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