An investigation of the electronic properties of MgO doped with group III, IV, and v elements: Trends with varying dopant atomic number

Journal of Physics Condensed Matter

Volumn 22, Issue 4, 2010, Pages

  Liu, Guodong ^a   Ji, Shulin ^a   Yin, Liangliang ^a   Fei, Guangtao ^a   Ye, Changhui ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC NUMBERS; DOPANT ATOMS; FERROMAGNETIC PROPERTIES; FORMATION ENERGIES; GROUP III; HALF-METALLIC; MAIN-GROUP ELEMENTS; METAL ATOMS; METAL-DOPING; METALLIC BEHAVIORS; OPTIMIZED SYSTEM; PARAMAGNETIC STATE;

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; METALS;

ATOMS;

EID: 74949104677     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/4/046002     Document Type: Article

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