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Volumn 39, Issue 1, 2010, Pages 15-20

Effects of growth temperature and postgrowth annealing on inhomogeneous luminescence characteristics of green-emitting InGaN films

(6) Masui, Hisashi a Melo, Thiago a Sonoda, Junichi a Weisbuch, Claude a Nakamura, Shuji a Denbaars, Steven P a

a University of California (United States)

Author keywords

Dendrite like morphology; InGaN; Light emitting devices; Photoluminescence

Indexed keywords

AS-GROWN; BRIGHT SPOTS; DENDRITIC MORPHOLOGY; GRANULAR MORPHOLOGY; HIGH GROWTH TEMPERATURES; INGAN; INGAN ALLOY; INGAN/GAN; INHOMOGENEITIES; LIGHT EMITTING DEVICES; LONG WAVELENGTH; LUMINESCENCE CHARACTERISTICS; MULTIPLE-QUANTUM-WELL STRUCTURES; POSTGROWTH ANNEALING; SAPPHIRE SUBSTRATES; SCALE CHARACTERIZATION;

CERIUM ALLOYS; CURRENT DENSITY; DENDRIMERS; DENDRITES (METALLOGRAPHY); GROWTH TEMPERATURE; LIGHT; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE STRUCTURES; SPECIAL EFFECTS;

LIGHT EMISSION;

EID: 74449093303 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0969-y Document Type: Article

Times cited : (5)

References (11)

1
- 0032090931
- 10.1016/S0022-0248(98)00151-1 1:CAS:528:DyaK1cXkt1ygt7k%3D
- LT Romano MD McCluskey BS Krusor DP Bour C Chua S Brennan KM Yu 1998 J. Cryst. Growth 189/190 33 10.1016/S0022-0248(98)00151-1 1:CAS:528: DyaK1cXkt1ygt7k%3D
- (1998) J. Cryst. Growth , vol.189-190 , pp. 33
- Romano, L.T.¹ McCluskey, M.D.² Krusor, B.S.³ Bour, D.P.⁴ Chua, C.⁵ Brennan, S.⁶ Yu, K.M.⁷

2
- 51349166575
- 10.1063/1.2976324 2008ApPhL.93h1915W
- Q Wang T Wang J Bai AG Cullis PJ Parbrook F Ranalli 2008 Appl. Phys. Lett. 93 081915 10.1063/1.2976324 2008ApPhL..93h1915W
- (2008) Appl. Phys. Lett. , vol.93 , pp. 081915
- Wang, Q.¹ Wang, T.² Bai, J.³ Cullis, A.G.⁴ Parbrook, P.J.⁵ Ranalli, F.⁶

3
- 84864157792
- 10.3952/lithjphys.46302 1:CAS:528:DC%2BD2sXhs1alurg%3D
- Y-C Cheng S-W Feng CC Yang C-T Kuo J-S Tsang S Juršenas S Miasojedovas A Žukauskas 2006 Lithuanian J. Phys. 46 3 311 10.3952/lithjphys.46302 1:CAS:528:DC%2BD2sXhs1alurg%3D
- (2006) Lithuanian J. Phys. , vol.46 , Issue.3 , pp. 311
- Cheng, Y.-C.¹ Feng, S.-W.² Yang, C.C.³ Kuo, C.-T.⁴ Tsang, J.-S.⁵ Juršenas, S.⁶ Miasojedovas, S.⁷ Žukauskas, A.⁸

4
- 0038143264
- Y.-Y. Chung, Y.-S. Lin, S.-W. Feng, Y.-C. Cheng, E.-C. Lin, C.C. Yang, K.-J. Ma, C. Hsu, H.-W. Chuang, C.-T. Kuo, and J.-S. Tsang, J. Appl. Phys. 93, 9693 (2003).
- (2003) J. Appl. Phys. , vol.93 , pp. 9693
- Chung, Y.-Y.¹ Lin, Y.-S.² Feng, S.-W.³ Cheng, Y.-C.⁴ Lin, E.-C.⁵ Yang, C.C.⁶ Ma, K.-J.⁷ Hsu, C.⁸ Chuang, H.-W.⁹ Kuo, C.-T.¹⁰ Tsang, J.-S.¹¹

5
- 0037011619
- 10.1063/1.1526917 1:CAS:528:DC%2BD38XptFGitL0%3D 2002ApPhL.81.4353K
- A Kaneta K Okamoto Sg Fujita G Marutsuki Y Narukawa T Mukai 2002 Appl. Phys. Lett. 81 4353 10.1063/1.1526917 1:CAS:528:DC%2BD38XptFGitL0%3D 2002ApPhL..81.4353K
- (2002) Appl. Phys. Lett. , vol.81 , pp. 4353
- Kaneta, A.¹ Okamoto, K.² Sg, F.³ Marutsuki, G.⁴ Narukawa, Y.⁵ Mukai, T.⁶

6
- 0347622319
- 10.1143/JJAP.42.L1244 1:CAS:528:DC%2BD3sXosFSitbc%3D 2003JaJAP.42.1244I
- H Itoh S Watanabe M Goto N Yamada M Misra AY Kim SA Stockman 2003 Jpn. J. Appl. Phys. 42 L1244 10.1143/JJAP.42.L1244 1:CAS:528:DC%2BD3sXosFSitbc%3D 2003JaJAP..42.1244I
- (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 1244
- Itoh, H.¹ Watanabe, S.² Goto, M.³ Yamada, N.⁴ Misra, M.⁵ Kim, A.Y.⁶ Stockman, S.A.⁷

7
- 74449084810
- 10.1002/pssc.200880869
- J Danhof C Vierheilig UT Schwarz T Meyer M Peter B Hahn M Maier J Wagner 2009 Phys. Status Solidi C 6 S747 10.1002/pssc.200880869
- (2009) Phys. Status Solidi C , vol.6 , pp. 747
- Danhof, J.¹ Vierheilig, C.² Schwarz, U.T.³ Meyer, T.⁴ Peter, M.⁵ Hahn, B.⁶ Maier, M.⁷ Wagner, J.⁸

8
- 65749110875
- 10.1016/j.jcrysgro.2009.01.066 1:CAS:528:DC%2BD1MXms1ajs7Y%3D 2009JCrGr.311.2933Q
- D Queren M Schillgalies A Avramescu G Brüderl A Laubsch S Lutgen U Strau 2009 J. Cryst. Growth 311 2933 10.1016/j.jcrysgro.2009.01.066 1:CAS:528:DC%2BD1MXms1ajs7Y%3D 2009JCrGr.311.2933Q
- (2009) J. Cryst. Growth , vol.311 , pp. 2933
- Queren, D.¹ Schillgalies, M.² Avramescu, A.³ Brüderl, G.⁴ Laubsch, A.⁵ Lutgen, S.⁶ Strau, U.⁷

9
- 2942581282
- 10.1063/1.1703828 1:CAS:528:DC%2BD2cXjvVSrs7g%3D 2004JAP.95.5388F
- S-W Feng T-Y Tang Y-C Lu S-J Liu E-C Lin CC Yang K-J Ma C-H Shen LC Chen KH Kim JY Lin HX Jiang 2004 J. Appl. Phys. 95 5388 10.1063/1.1703828 1:CAS:528:DC%2BD2cXjvVSrs7g%3D 2004JAP....95.5388F
- (2004) J. Appl. Phys. , vol.95 , pp. 5388
- Feng, S.-W.¹ Tang, T.-Y.² Lu, Y.-C.³ Liu, S.-J.⁴ Lin, E.-C.⁵ Yang, C.C.⁶ Ma, K.-J.⁷ Shen, C.-H.⁸ Chen, L.C.⁹ Kim, K.H.¹⁰ Lin, J.Y.¹¹ Jiang, H.X.¹²

10
- 47749099487
- 10.1002/pssa.200824044 1:CAS:528:DC%2BD1cXmvFWhsrs%3D
- H Masui H Yamada K Iso H Hirasawa NN Fellows JS Speck S Nakamura SP DenBaars 2008 Phys. Status Solidi A 205 1203 10.1002/pssa.200824044 1:CAS:528:DC%2BD1cXmvFWhsrs%3D
- (2008) Phys. Status Solidi A , vol.205 , pp. 1203
- Masui, H.¹ Yamada, H.² Iso, K.³ Hirasawa, H.⁴ Fellows, N.N.⁵ Speck, J.S.⁶ Nakamura, S.⁷ Denbaars, S.P.⁸

11
- 49749099333
- 10.1088/0268-1242/23/8/085018 2008SeScT.23h5018M
- H Masui S Nakamura SP DenBaars 2008 Semicond. Sci. Technol. 23 085018 10.1088/0268-1242/23/8/085018 2008SeScT..23h5018M
- (2008) Semicond. Sci. Technol. , vol.23 , pp. 085018
- Masui, H.¹ Nakamura, S.² Denbaars, S.P.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.