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Volumn , Issue , 2003, Pages 38-42

A new parameter extraction approach for the circuit-based models of FETs

Author keywords

Analytical models; Circuit simulation; Data mining; Equivalent circuits; FETs; Frequency measurement; Mathematical model; Parameter extraction; Scattering parameters; Smoothing methods

Indexed keywords

ANALYTICAL MODELS; CIRCUIT SIMULATION; DATA MINING; ELECTRIC NETWORK ANALYSIS; EQUIVALENT CIRCUITS; EXTRACTION; MATHEMATICAL MODELS; PARAMETER EXTRACTION; SCATTERING PARAMETERS;

EID: 74449091619     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMIA.2003.238601     Document Type: Conference Paper
Times cited : (2)

References (5)
  • 1
    • 0024035826 scopus 로고
    • Frequency Dependence of GaAs FET Equivalent Circuit Elements Extracted from the measured Two-Port S Parameters
    • July
    • Fyung-Whan Weom, Tue-Suk Ha and Jung-Woong Ra, "Frequency Dependence of GaAs FET Equivalent Circuit Elements Extracted from the measured Two-Port S Parameters," Proc. of the IEEE, vol. 76, Num. 7, July 1988, pp. 843-845.
    • (1988) Proc. of the IEEE , vol.76 , Issue.7 , pp. 843-845
    • Weom, F.-W.1    Ha, T.-S.2    Ra, J.-W.3
  • 2
    • 0025070665 scopus 로고
    • Parameter Extraction Technique for Non-Linear MESFET Models
    • Antony Davies and Adam K. Jastrzebski, "Parameter Extraction Technique for Non-Linear MESFET Models," IEEE MTT-S Digest, 1990, pp. 747-750.
    • (1990) IEEE MTT-S Digest , pp. 747-750
    • Davies, A.1    Jastrzebski, A.K.2
  • 3
    • 0029274657 scopus 로고
    • A New Method to Determine the Source Resistance Of FET from Measured S-Parameters Under Active-Bias Conditions
    • Volker Sommer, "A New Method to Determine the Source Resistance Of FET from Measured S-Parameters Under Active-Bias Conditions," IEEE Trans. Microwave Theory Tech., 1995, vol. 43, no.3, pp. 504-510.
    • (1995) IEEE Trans. Microwave Theory Tech. , vol.43 , Issue.3 , pp. 504-510
    • Sommer, V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.