Electronic structures of N- and C-doped NiO from first-principles calculations

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 374, Issue 9, 2010, Pages 1184-1187

  Long, Run ^a   English, Niall J ^a   Mooney, Damian A ^a  

^a UNIVERSITY COLLEGE DUBLIN   (Ireland)

Author keywords

Doped; Electronic structure; NiO

Indexed keywords

CALCULATIONS; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; NICKEL OXIDE;

BAND GAP NARROWING; CONDUCTION-BAND MINIMUM; DOPED; FIRST-PRINCIPLES CALCULATION; IMPURITY BANDS; N-DOPED; RECOMBINATION CENTRES; VISIBLE-LIGHT IRRADIATION;

NITROGEN COMPOUNDS;

EID: 74249093707     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2009.12.058     Document Type: Article

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