C-V calculations in CdS/CdTe thin films solar cells

Thin Solid Films

Volumn 518, Issue 7, 2010, Pages 1796-1798

  Castillo Alvarado, F L ^a   Inoue Chavez J A ^a   Vigil Galan O ^a   Sanchez Meza E ^a   Lopez Chavez E ^b   Contreras Puente, G ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE LA CIUDAD DE MÉXICO   (Mexico)

Author keywords

C V matching; CdS CdTe thin films; Semiconductors; Solar cells

Indexed keywords

BAND DISCONTINUITIES; C-V (CAPACITANCE VS. VOLTAGE); C-V MATCHING; CDS FILMS; CDS/CDTE; CDS/CDTE SOLAR CELLS; CDS/CDTE THIN FILMS; CDTE; CHARGE NEUTRALITY; CHEMICAL-BATH DEPOSITION; HETEROJUNCTION SOLAR CELLS; HETEROSTRUCTURES; INTERFACE CHARGE; INTERFACE PARAMETERS; PHOTOVOLTAIC APPLICATIONS; POLYCRYSTALLINE THIN FILM; QUASI-FERMI LEVEL; SEMI-METALS; SEMICONDUCTOR HETEROJUNCTIONS; THIN FILMS SOLAR CELLS; VAPOR TRANSPORT;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CAPACITANCE; CURVE FITTING; FERMI LEVEL; FERMIONS; SOLAR CELLS; SOLAR POWER GENERATION; THIN FILMS;

HETEROJUNCTIONS;

EID: 73949148958     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.035     Document Type: Article

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