Complex dielectric function of ion implantation amorphized SiC determined by spectroscopic ellipsometry

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 5, 2008, Pages 1374-1377

  Lohner, T ^a   Zolnai, Z ^a   Petrik, P ^a   Battistig, G ^a   Garcia Lopez J ^b   Morilla, Y ^b   Koos A ^a   Osvath Z ^a   Fried, M ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b CENTRO NACIONAL DE ACELERADORES   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; COMPLEX DIELECTRIC FUNCTIONS; DETECTION ANGLE; ION BEAM ANALYSIS; RESEARCH GROUPS; SCATTERING CROSS SECTION; SINGLE-CRYSTALLINE; SPECTROSCOPIC ELLIPSOMETERS; STEP HEIGHT; TAUC-LORENTZ MODELS;

ATOMIC FORCE MICROSCOPY; ION BEAMS; ION IMPLANTATION; SILICON CARBIDE; SPECTROSCOPIC ELLIPSOMETRY;

AMORPHOUS SILICON;

EID: 73849141791     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200777883     Document Type: Conference Paper

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