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Volumn 48, Issue 11, 2009, Pages

Optical and structural properties of ion-implanted InGaZnO thin films studied with spectroscopic ellipsometry and transmission electron microscopy

(6) Park, Jun Woo a Jeong, Pil Seong a Choi, Suk Ho a Lee, Hosun a Kong, Bo Hyun b Cho, Hyung Koun b

a Kyung Hee University (South Korea)

b Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ANNEALING TEMPERATURES; BAND GAP ENERGY; DIELECTRIC FUNCTIONS; FLUENCES; FORMING GAS ANNEALING; IMPLANTED SAMPLES; NANOCRYSTALLINE PHASE; OPTICAL GAP ENERGIES; RF SPUTTERING DEPOSITION; ROOM TEMPERATURE; SUPER-LATTICE STRUCTURES;

AMORPHOUS FILMS; DEPOSITION; ION BOMBARDMENT; ION IMPLANTATION; LIGHT TRANSMISSION; NANOCRYSTALLINE ALLOYS; OPTICAL PROPERTIES; OXYGEN; OXYGEN VACANCIES; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES;

ANNEALING;

EID: 73849127800 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.111603 Document Type: Article

Times cited : (13)

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