Analysis of electronic and photocatalytic properties of semiconductor powders through wavelength-dependent quasi-Fermi level and reactivity measurements

Journal of Physical Chemistry C

Volumn 113, Issue 49, 2009, Pages 20890-20895

  Mitoraj, Dariusz ^a   Kisch, Horst ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP STATE; CURRENT AMPLIFICATION; DELOCALIZATIONS; ELECTRON EXCHANGE; ELECTRON-HOLE RECOMBINATION; ELECTRONIC COUPLING; ENERGY LEVEL; HETEROCYCLES; HOLE STABILIZATION; INTERFACIAL ELECTRON TRANSFER; NITROGEN SPECIES; PHOTO-VOLTAGE; PHOTOCATALYTIC PROPERTY; PHOTOGENERATED HOLES; QUASI-FERMI LEVEL; REACTIVITY MEASUREMENTS; SEMICONDUCTOR POWDERS; TIO; UV EXCITATION; VALENCE BAND STATE; VISIBLE LIGHT;

AMPLIFICATION; ELECTRONS; ENERGY GAP; FERMI LEVEL; FERMIONS; FORMIC ACID; ORGANIC ACIDS; REACTION INTERMEDIATES; TITANIUM DIOXIDE; UREA;

REDUCING AGENTS;

EID: 73849102450     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp903893w     Document Type: Article

References (34)

1. Braslavsky, S. E.; et al. Pure Appl. Chem. 2007, 79, 293.
2. Gerischer, H. Electrochim. Acta 1990, 35, 1677.
3. Memming, R. J. Electrochem. Soc. 1969, 116, 785.
4. Bolts, J. M.; Wrighton, M. S. J. Phys. Chem. 1976, 80, 2641.
5. Pond, S. F. Surf. Sci. 1973, 37, 596.
6. Boschloo, G. K.; Goossens, A.; Schoonman, J. J. Electrochem. Soc. 1997, 144, 1311.
7. Chaparro, A. M. J. Electroanal. Chem. 1999, 462, 251.
8. Boschloo, G.; Fitzmaurice, D. J. Phys. Chem. B 1999, 103, 2228.
9. Rothenberger, G.; Fitzmaurice, D.; Grätzel, M. J. Phys. Chem. 1992, 96, 5983.
10. Ward, M. D.; White, J. R.; Bard, A. J. J. Am. Chem. Soc. 1983, 105, 27.
11. White, J. R.; Bard, A. J. J. Phys. Chem. 1985, 89, 1947.
12. Finlayson, M. F.; Wheeler, B. L.; Kakuta, N.; Park, K.-H.; Bard, A. J.; Campion, A.; Fox, M. A.; Webber, S. E.; White, J. M. J. Phys. Chem. 1985, 89, 5676.
13. Roy, A. M.; De, G. C.; Sasmal, N.; Bhattacharyya, S. S. Int. J. Hydrogen Energy 1995, 20, 627.
14. Rusina, O.; Macyk, W.; Kisch, H. J. Phys. Chem. B 2005, 109, 10858.
15. Kisch, H.; Burgeth, G.; Macyk, W. Adv. Inorg. Chem. 2004, 56, 241.
16. Asahi, R.; Morikawa, T.; Ohwaki, T.; Aoki, K.; Taga, Y. Science (Washington, DC U. S.) 2001, 293, 269.
17. Mitoraj, D.; Kisch, H. Angew. Chem., Int. Ed. 2008, 47, 9975.
18. Chen, H.; Nambu, A.; Wen, W.; Graciani, J.; Zhong, Z.; Hanson, J. C.; Fujita, E.; Rodriguez, J. A. J. Phys. Chem. C 2007, 111, 1366.
19. Joung, S.-K.; Amemiya, T.; Murabayashi, M.; Itoh, K. Appl. Catal, A 2006, 312, 20.
20. Kisch, H.; Sakthivel, S.; Janczarek, M.; Mitoraj, D. J. Phys. Chem. C 2007, 111, 11445.
21. Wang, X.; Maeda, K.; Thomas, A.; Takanabe, K.; Xin, G.; Carlsson, J. M.; Domen, K.; Antonietti, M. Nat. Mater. 2009, 8, 76.
22. Tauc, J.; Grigorovici, R.; Vancu, A. J. Phys. Soc. Jpn., Supplement 1966, 21, 123.
23. Karvaly, B.; Hevesi, I. Z Naturforsch, A 1971, 26, 245.
24. Assuming an indirect semiconductor.
25. Schwarz, H. A.; Dodson, R. W. J. Phys. Chem. 1989, 93, 409.
26. Neta, P.; Grodkowski, J.; Ross, A. B. J. Phys. Chem. Ref. Data 1996, 25, 709.
27. 2+.
28. Tachikawa, T.; Tojo, S.; Fujitsuka, M.; Majima, T. Langmuir 2004, 20, 9441.
29. 2+.
30. Redmond, G.; Fitzmaurice, D. J. Phys. Chem. 1993, 97, 1426.
31. Irie, H.; Watanabe, Y.; Hashimoto, K. J. Phys. Chem. B 2003, 107, 5483.
32. 2-N.
33. Diwald, O.; Thompson, T. L.; Zubkov, T.; Goralski, E. G.; Walck, S. D.; Yates, J. T., Jr. J. Phys. Chem. B 2004, 108, 6004.
34. Balcerski, W.; Ryu, S. Y.; Hoffmann, M. R. J. Phys. Chem. C 2007, 111, 15357.