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Volumn 106, Issue 12, 2009, Pages

Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-DEPENDENT; DILUTED MAGNETIC SEMICONDUCTORS; EASY AXIS; GE SUBSTRATES; HIGH ASPECT RATIO; LONGITUDINAL DIRECTION; MAGNETIC IONS; SEMICONDUCTOR NANOWIRE; SPIN MAGNETIC MOMENTS; SPINTRONICS; VERTICALLY ALIGNED; X-RAY MAGNETIC CIRCULAR DICHROISM;

EID: 73849101314     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3267047     Document Type: Article
Times cited : (8)

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    • See EPAPS supplementary material at E-JAPIAU-106-088923 for the integrated XAS and XMCD data to calculate the element-specific spin (mspin) and orbital (morb) magnetic moments per atom (Figure S1), and temperature-dependent XMCD spectra of vertically grown Mn:Ge nanowires on Ge (111) substrate, showing that the Mn:Ge nanowires are RT ferromagnetic materials (Figure S2)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.