Modeling and simulation of a single tin dioxide nanobelt FET for chemical sensors

IEEE Sensors Journal

Volumn 10, Issue 2, 2010, Pages 235-242

  Soares, Antonio J ^a   Perry, Reginald J ^a  

^a FLORIDA A AND M UNIVERSITY   (United States)

Author keywords

Analyte; Nanobelt; Nanolayer

Indexed keywords

ANALYTE; ANALYTES; DEPLETION MODES; DEVICE SATURATION; DRAIN CONTACTS; ELECTRICAL CONTACTS; EXPERIMENTAL DATA; FABRICATED SENSORS; GAS SENSORS; GATE BIAS DEPENDENCE; IV CHARACTERISTICS; MODEL RESULTS; MODELING AND SIMULATION; MOS-FET; NANO LAYERS; NUMERICAL SIMULATION; PINCHOFF; ROOM TEMPERATURE; SATURATION CURRENT; SCHOTTKY; SCHOTTKY CONTACTS; THERMAL EVAPORATION TECHNIQUE;

COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; GAS ADSORPTION; MESFET DEVICES; NANOBELTS; OXYGEN; SENSORS; SINGLE CRYSTALS; THERMAL EVAPORATION; TIN; TIN DIOXIDE; TITANIUM COMPOUNDS;

OXYGEN VACANCIES;

EID: 73849087930     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2009.2032154     Document Type: Article

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