Epitaxially grown emitters for thin film silicon solar cells result in 16% efficiency

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Van Nieuwenhuysen, K ^a   Payo, M Récaman ^a   Kuzma Filipek, I ^a   Van Hoeymissen, J ^a   Beaucarne, G ^a   Poortmans, J ^a  

^a IMEC   (Belgium)

Author keywords

Emitter formation; Epitaxy; Solar cells

Indexed keywords

BASE LAYERS; BULK SILICON; COST EFFECTIVE; DOPING PROFILES; EMITTER FORMATION; EPITAXIAL THIN FILMS; EPITAXIALLY GROWN; INDUSTRIAL SOLAR CELLS; OPTICAL LIGHT; THIN-FILM SILICON SOLAR CELLS;

CELLS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; SILICON SOLAR CELLS; SOLAR CELLS; THIN FILM DEVICES; THIN FILMS; VOLATILE ORGANIC COMPOUNDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 73649102076     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.061     Document Type: Article

References (4)

1. Van Nieuwenhuysen K., et al. Proceedings of the 22nd PVSEC, Milan (September 2007) 920
2. Van Nieuwenhuysen K., et al. Thin Solid Films 517 (2008) 383-384
3. Duerinckx F., et al. Prog. Photovolt. Res. Appl. 16 (2008) 399-407
4. Kuzma-Filipek I., et al. J. Appl. Phys. (2008) 104