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Volumn 181, Issue 3, 2010, Pages 709-710
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Model-Driven Development for scientific computing. Computations of RHEED intensities for a disordered surface. Part II
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Author keywords
Model Driven Architecture (MDA); Model Driven Development (MDD); Model Driven Engineering (MDE); Reflection high energy electron diffraction (RHEED); UML
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Indexed keywords
APPLICATION ARCHITECTURE;
CATALOGUE IDENTIFIERS;
CLASS DIAGRAMS;
COMPUTER MODELS;
CRITICAL PARTS;
CRYSTALLINE SUBSTRATES;
DISORDERED SURFACES;
DISTRIBUTED PROGRAM;
EXPERIMENTAL DATA;
FUNCTION OF TIME;
GROWTH PROCESS;
HUMAN KNOWLEDGE;
IN-SITU ANALYSIS;
IRELAND;
LOGICAL STRUCTURE;
MASTER PROGRAMS;
MODEL DRIVEN ARCHITECTURES;
MODEL-DRIVEN ARCHITECTURE;
MODEL-DRIVEN DEVELOPMENT;
MODEL-DRIVEN ENGINEERING;
MULTITHREADED;
MULTITHREADED COMPUTATION;
NESTED TRANSACTIONS;
NEW DEVICES;
NUMERICAL CALCULATION;
NUMERICAL MODELS;
OPERATING SYSTEMS;
PLATFORM SPECIFIC MODEL;
PROGRAMMING LANGUAGE;
QUANTITATIVE INFORMATION;
QUANTUM DOT;
QUANTUM WELL;
REAL TIME;
RHEED INTENSITY OSCILLATIONS;
RUNNING TIME;
SCIENTIFIC APPLICATIONS;
SCIENTIFIC COMPUTING;
SEQUENCE DIAGRAMS;
SHARED DATA STRUCTURE;
SOFTWARE DEVELOPMENT PROCESS;
SOLUTION METHODS;
STAND -ALONE;
SUBPROGRAMS;
TEST DATA;
THIN EPITAXIAL FILMS;
USE CASE MODEL;
USER FEEDBACK;
VISUAL MODELLING;
VISUALISATION;
WINDOWS XP;
CONTROL SURFACES;
CORROSION PREVENTION;
DATA STRUCTURES;
ELECTRON DIFFRACTION;
ELECTRONS;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
HIGH ENERGY PHYSICS;
LASERS;
LIBRARIES;
LIGHT;
LIGHT EMITTING DIODES;
LINGUISTICS;
MAGNETIC STORAGE;
MARKUP LANGUAGES;
METALLORGANIC VAPOR PHASE EPITAXY;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
PROGRAM DOCUMENTATION;
QUANTUM WELL LASERS;
REFLECTION;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WELLS;
SOFTWARE ARCHITECTURE;
SOFTWARE DESIGN;
SOLAR CONCENTRATORS;
SURFACE MORPHOLOGY;
SURFACE ROUGHNESS;
SURFACES;
TEST FACILITIES;
WINDOWS OPERATING SYSTEM;
FILM GROWTH;
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EID: 73449129664
PISSN: 00104655
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cpc.2009.11.011 Document Type: Article |
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Times cited : (1)
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References (0)
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