Thermal accumulation effects on the transient temperature responses in LDMOSFETs under the impact of a periodic electromagnetic pulse

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 345-352

  Ren, Zhen ^a   Yin, Wen Yan ^a,b   Shi, Yan Bing ^a   Liu, Qing Huo ^c  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c Duke University   (United States)

Author keywords

Electrostatic discharge (ESD); LDMOSFET; Peak temperature; Periodic electromagnetic pulse (EMP); Thermal accumulation; Time domain finite element method (FEM); Transient thermal response

Indexed keywords

CONJUGATED GRADIENT; LDMOSFET; PEAK TEMPERATURES; PULSEWIDTHS; THERMAL ACCUMULATION; THERMAL ACCUMULATION EFFECTS; TIME-DOMAIN FINITE ELEMENT METHODS; TRANSIENT TEMPERATURE RESPONSE; TRANSIENT THERMAL RESPONSE; WAVE FORMS;

ELECTROMAGNETIC PULSE; ELECTROMAGNETISM; ELECTRONIC WARFARE; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; FINITE ELEMENT METHOD; METHOD OF MOMENTS; MOS DEVICES; NUCLEAR EXPLOSIONS;

TIME DOMAIN ANALYSIS;

EID: 73349143610     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2034995     Document Type: Article

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