Origin of oxygen vacancies in resistive switching memory devices

Journal of Physics: Conference Series

Volumn 190, Issue , 2009, Pages

  Andreasson, B P ^a   Janousch, M ^a   Staub, U ^a   Meijer, G I ^b   Ramar, A ^c,d   Krbanjevic, J ^c   Schaeublin, R ^c  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b IBM RESEARCH ZURICH   (Switzerland)

^c EPFL   (Switzerland)

^d TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 73349128742     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/190/1/012074     Document Type: Conference Paper

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