Intra-Atomic Mid-IR (3.7 μm) Luminescence in ZnSe:Fe Grown by Molecular Beam Epitaxy

AIP Conference Proceedings

Volumn 709, Issue , 2004, Pages 446-447

  Vitiello, Miriam Serena ^a   Rizzi, Francesco ^a   Scamarcio, Gaetano ^a   Colli, Alan ^b   Martelli, Faustino ^b   Franciosi, Alfonso ^b  

^a UNIVERSITY OF BARI   (Italy)

^b UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAMS; QUANTUM ELECTRONICS; RESONATORS; VLSI CIRCUITS;

FE-DOPED; INTERNAL TRANSITIONS; INTRA-ATOMIC; NARROW BANDS; THERMAL-ANNEALING;

MOLECULAR BEAM EPITAXY;

EID: 73349109657     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.1764051     Document Type: Conference Paper

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4. Scamarcio, G., and Capasso, F., "Electroluminescence by impact ionization of deep levels in semiconductors, " in Hot Electrons in Semiconductors-Physics and Devices, edited by N. Balkan, Oxford: Clarendon Press, 1998, pp. 465-478.