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Volumn 39, Issue 10, 2009, Pages 1789-1795
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Correlation between Cu (I)-complexes and filling of via cross sections by copper electrodeposition
a
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Author keywords
Acceleration effect; Copper damascene; Cu(I) complex; Rotating ring disk electrode; Via cross section
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Indexed keywords
ACCELERATION EFFECTS;
BOTTOM-UP FILLING;
COPPER DAMASCENE;
COPPER ELECTRODEPOSITION;
CROSS SECTION;
DIELECTRIC LAYER;
DISK ELECTRODE;
HIGH ASPECT RATIO CAVITIES;
METAL INTERCONNECTS;
MICROSCOPIC OBSERVATIONS;
PULSE CURRENTS;
REVERSE PULSE CURRENTS;
RING ELECTRODES;
ROTATING RING-DISK ELECTRODE;
SI WAFER;
ASPECT RATIO;
COPPER;
DISKS (STRUCTURAL COMPONENTS);
ELECTRODEPOSITION;
FILLING;
ROTATING DISKS;
ROTATION;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICES;
SILICON WAFERS;
COPPER COMPOUNDS;
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EID: 73149125140
PISSN: 0021891X
EISSN: None
Source Type: Journal
DOI: 10.1007/s10800-009-9878-2 Document Type: Article |
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Times cited : (31)
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References (17)
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