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Volumn , Issue , 2009, Pages 1720-1723
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A highly efficient doherty power amplifier employing optimized carrier cell
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Author keywords
[No Author keywords available]
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Indexed keywords
BACK-OFF;
DOHERTY;
DOHERTY POWER AMPLIFIER;
GAN HEMTS;
IMPROVING EFFICIENCY;
KNEE VOLTAGE;
LOAD CONDITION;
LOAD IMPEDANCE;
MEASURED RESULTS;
NOVEL DESIGN;
OUTPUT POWER LEVELS;
GALLIUM NITRIDE;
HETEROJUNCTION BIPOLAR TRANSISTORS;
HIGH ELECTRON MOBILITY TRANSISTORS;
POWER AMPLIFIERS;
SEMICONDUCTING GALLIUM;
MICROWAVES;
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EID: 72949109116
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/EUMC.2009.5296569 Document Type: Conference Paper |
Times cited : (15)
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References (7)
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