Introduction of innovative dopant concentration profiles to broaden the recombination zone of phosphorescent OVPD-processed organic light emitting diodes

Materials Research Society Symposium Proceedings

Volumn 1154, Issue , 2009, Pages 181-186

  Bosing M ^a   Zimmermann, C ^a   Lindla, F ^a   Jessen, F ^a   Van Gemmern, P ^b   Bertram, D ^b   Meyer, N ^c   Keiper, D ^c   Heuken, M ^a,c   Kalisch, H ^a   Jansen, R H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EFFICIENCY; LUMINANCE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

CONCENTRATION PROFILES; DOPANT CONCENTRATIONS; EMISSIVE LAYERS; LUMINOUS CURRENT EFFICIENCY; NUMERICAL SOLUTION; RECOMBINATION ZONES; SEMICONDUCTOR DEVICE EQUATIONS; VAPOUR PHASE DEPOSITIONS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 72849147971     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1154-b11-05     Document Type: Conference Paper

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