Modeling of temperature-dependent resistance in micro- and nanopolycrystalline VO2 thin films with random resistor networks

Optical Engineering

Volumn 47, Issue 3, 2008, Pages

  Dai, Jun ^a,b   Wang, Xingzhi ^a   Huang, Ying ^a   Yi, Xinjian ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

hysteresis; random resistor network; vanadium dioxide; volume fraction

Indexed keywords

EXPERIMENTAL MEASUREMENTS; FIRST-ORDER; HIGH TEMPERATURE; ION-BEAM SPUTTERING; LOW TEMPERATURES; METALLIC STATE; MODELING RESULTS; NANO-POLYCRYSTALLINE FILMS; PHASE TRANSITION TEMPERATURES; RANDOM RESISTOR NETWORKS; SEMICONDUCTOR BEHAVIOR; TEMPERATURE RANGE; TEMPERATURE-DEPENDENT RESISTANCE; VANADIUM DIOXIDE;

COMPUTER SIMULATION; HYSTERESIS; HYSTERESIS LOOPS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS; VANADIUM;

RESISTORS;

EID: 72749115355     PISSN: 00913286     EISSN: 15602303     Source Type: Journal    
DOI: 10.1117/1.2894146     Document Type: Article

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