A 77GHz 3.3V 4-channel transceiver in SiGe BiCMOS technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2009, Pages 186-189

  Trotta, S ^a   Dehlink, B ^a   Ghazinour, A ^a   Morgan, D ^a   John, J ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Bipolar technology; Low noise receiver; Mm wave VCO; Multi channel; SiGe; Transceiver

Indexed keywords

AUTOMOTIVE RADAR APPLICATIONS; BIPOLAR TECHNOLOGY; CONVERSION GAIN; FOUR-CHANNEL; LOW NOISE RECEIVERS; MM-WAVE; MULTI-CHANNEL; OUTPUT POWER; PRESCALERS; PUSH-PUSH; SIGE BICMOS TECHNOLOGY; TUNING RANGES;

MILLIMETER WAVES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SILICON ALLOYS; TECHNOLOGY; TRANSCEIVERS; VARIABLE FREQUENCY OSCILLATORS;

BICMOS TECHNOLOGY;

EID: 72449197585     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2009.5314247     Document Type: Conference Paper

References (8)

1. H. P. Forstner, et al., "A 77GHz 4-channel automotive radar transceiver in SiGe", IEEE RFIC Symposium, pp. 233-236, June, 2008.
2. A. Babakhani, et al., "A 77-GHz Phased-Array Transceiver with On-Chip Antennas in Silicon: Receiver and Antennas", IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 2795-2806, Dec., 2006.
3. A. Natarajan, et al., "A 77-GHz Phased-Array Transceiver with On-Chip Antennas in Silicon: Transmitter and Local LO-Path Phase Shifting", IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 2795-2806, Dec., 2006.
4. S. T. Nicolson, et al., "A 77 - 79-GHz Doppler radar transceiver in silicon", IEEE Compound Semiconductor IC Symposium, pp. 252-255, Oct., 2007.
5. S. Trotta, et al., "A tunable flipflop frequency divider up to 113 GHz and a fully differential 77GHz push-push VCO in SiGe BiCMOS technology", IEEE RFIC 2009.
6. S. Trotta, et al., "A Multi-Channel Rx for 76.5GHz Automotive Radar Applications with 55dB IF Channel-to-Channel Isolation", accepted for EuMW 2009.
7. S.-C. Tseng, et al., "True 50% Duty-Cycle SSH and SHH SiGe BiCMOS Divide-by-3 Prescalers", IEICE Trans. Electron., vol.E89-C, no.6, June 2006.
8. J.P. John et al., "Development of a Cost-Effective, Selective-Epi, SiGe:C HBT Module for 77GHz Automotive Applications", IEEE 2006 Proc. BCTM, pp. 247-250.