Copper interconnect advances to meet Moore's Law milestones

Solid State Technology

Volumn 52, Issue 10, 2009, Pages 16-19

  Bhatnagar, Ajay ^a   Naik, Mehul ^a   Ramaswami, Sesh ^a   Spuller, Matthew ^a   Armacost, Michael ^a   Perry, Russ ^a   Van Gogh, Jim ^a   Shu, Jen ^a   Miner, Gary ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTERCONNECTS; BARRIER MATERIAL; COPPER INTERCONNECTS; DEVICE DESIGN; MOORE'S LAW; NEW MATERIAL; NEW PROCESS; PER UNIT; PROCESS TECHNOLOGIES; PRODUCTION COST; SEED LAYER; STRAIN ENGINEERING; THREE-DIMENSIONAL (3D); ULTRA-LOW-K DIELECTRICS; ULTRA-VIOLET;

FILMS; OPTICAL INTERCONNECTS; PHYSICAL VAPOR DEPOSITION; THREE DIMENSIONAL;

CHEMICAL VAPOR DEPOSITION;

EID: 72449192358     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

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