First demonstration of heat dissipation improvement in CMOS technology using Silicon-On-Diamond (SOD) substrates

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2009, Pages

  Mazellier, J P ^a,d   Widiez, J ^a   Andrieu, F ^a   Lions, M ^a,b   Saada, S ^b   Hasegawa, M ^c   Tsugawa, K ^c   Brevard, L ^a   Dechamp, J ^a   Rabarot, M ^a   Delaye, V ^a   Cristoloveanu, S ^d   Clavelier, L ^a   Deleonibus, S ^a   Bergonzo, P ^b   Faynot, O ^a  

^a CEA LETI   (France)

^b CEA LIST   (France)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; ELECTRICAL CHARACTERISTIC; FULLY DEPLETED; GATE LENGTH; HEAT DISSIPATION; MOSFETS; THERMAL RESISTANCE;

CMOS INTEGRATED CIRCUITS;

EID: 72449190691     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2009.5318735     Document Type: Conference Paper

References (9)

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3. J. Zimmer et al, CS Mantech Conf 2008;
4. S. Saada et al., PSS(a) 2007;
5. K. Tsugawa et al., New Diamond and Carbon Tech. 2006;
6. Yugo et al., App. Phys. Letters, 1991;
7. M. Lions et al., PSS(a) 2009;
8. J. Widiez et al., SSE 2009
9. S.-M. Lee et al, JAP 1997.