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Volumn , Issue , 2009, Pages
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Topologies, voltage ratings and state of the art high power semiconductor devices for medium voltage wind energy conversion
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Author keywords
IGBT; IGCT; Topology; Voltage rating
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Indexed keywords
DEVELOPMENT TRENDS;
HIGH-POWER SEMICONDUCTOR DEVICES;
HIGH-VOLTAGE SEMICONDUCTORS;
IGCT;
MEDIUM VOLTAGE;
POWER CONVERSION;
POWER LEVELS;
POWER SEMICONDUCTOR DEVICES;
STATE OF THE ART;
STATIC AND DYNAMIC PERFORMANCE;
VOLTAGE LEVELS;
VOLTAGE RATINGS;
WIND ENERGY CONVERSION;
ACTIVE FILTERS;
ENERGY CONVERSION;
INSULATED GATE BIPOLAR TRANSISTORS (IGBT);
POWER ELECTRONICS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR SWITCHES;
THYRISTORS;
TOPOLOGY;
WIND POWER;
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EID: 72449186873
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/PEMWA.2009.5208365 Document Type: Conference Paper |
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Times cited : (43)
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References (8)
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