Evidence for developing fractional quantum hall states at even denominator 1/2 and 1/4 fillings in asymmetric wide quantum wells

Physical Review Letters

Volumn 103, Issue 25, 2009, Pages

  Shabani, J ^a   Gokmen, T ^a   Chiu, Y T ^a   Shayegan, M ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPONENT STATE; ELECTRON SYSTEMS; FRACTIONAL QUANTUM HALL STATE; GAAS QUANTUM WELLS; LANDAU LEVEL FILLING FACTORS; PFAFFIAN; QUANTUM HALL STATE; QUANTUM WELL; SUB-BANDS;

CHARGED PARTICLES; FILLING; SEMICONDUCTOR QUANTUM WELLS; WAVE FUNCTIONS;

CHARGE DISTRIBUTION;

EID: 72449170583     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.103.256802     Document Type: Article

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24. In principle, mf and mb can also be nonintegers, e.g., 3 and 5/2. For m=0, this corresponds to layer fillings 1/3 and 2/5 and the bilayer system ν=11/15. Such an imbalanced 2C FQH state has indeed been observed in WQWs with much smaller Δ01 [H.C. Manoharan, Phys. Rev. Lett. 79, 2722 (1997)]. However, such states are unlikely to explain our data, especially the state near ν=1/4. The (7, 13/3, 3) state, e.g., has ν=1/4 but its nf/nb=3 is larger than in data of Fig.3. More problematic, similar to the (753) state, the stability of this state is questionable as we discuss in the text. PRLTAO 0031-9007 10.1103/PhysRevLett.79.2722