SRAM yield enhancement with thin-BOX FD-SOI

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2009, Pages

  Shin, Changhwan ^a   Cho, Min Hee ^a   Tsukamoto, Yasumasa ^a,c   Nguyen, Bich Yen ^b   Nikolić, Borivoje ^a   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SOITEC USA   (United States)

^c RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

3-DIMENSIONAL; ANALYTICAL MODELING; ATOMISTIC PROCESS; BULK TECHNOLOGIES; DEVICE SIMULATIONS; SOI TECHNOLOGY; SRAM CELL; YIELD ENHANCEMENT; YIELD ESTIMATION;

FINITE DIFFERENCE METHOD; SILICON ON INSULATOR TECHNOLOGY; THREE DIMENSIONAL;

STATIC RANDOM ACCESS STORAGE;

EID: 72449137232     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2009.5318780     Document Type: Conference Paper

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