Ab initio investigation of oxygen adsorption on the stability of carbon nanotube field effect transistors (CNTFETs)

Solid State Communications

Volumn 150, Issue 5-6, 2010, Pages 258-261

  Ngwashi, D K ^a   Cross, R B M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

A. CNTFET; D. Schottky barrier; E. Charge transfer doping; E. Oxygen adsorption

Indexed keywords

AB INITIO; AB INITIO INVESTIGATION; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CHARGE TRANSFER DOPING; ELECTRICAL STABILITY; FUNCTIONALIZED CARBON NANOTUBES; INFLUENCE OF OXYGEN; OXYGEN ADSORPTION; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SOURCE AND DRAINS;

CARBON NANOTUBES; CHARGE TRANSFER; CHEMICAL STABILITY; DENSITY FUNCTIONAL THEORY; GAS ADSORPTION; ION EXCHANGE; MASS TRANSFER; OXYGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES;

FIELD EFFECT TRANSISTORS;

EID: 72449136346     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.11.014     Document Type: Article

References (18)

1. Taur Y., and Ning T.H. Fundamentals of Modern VLSI Devices (1998), Cambridge University Press
2. d'Honincthun H.C., Galdin-Retailleau S., See J., and Dollfus P. Applied Physics Letters 87 (2005) 172112-1
3. Avouris P. MRS Bulletin 29 (2004) 403-410
4. Jia C., Klinke C., Afzali A., and Avouris P. Applied Physics Letters 86 (2005) 123108-1
5. Casterman D., and De Souza M.M. Journal of Materials Science: Materials in Electronics 18 (2007) 729-734
6. Kresse G., and Furthmüller J. Physical Review B (Condensed Matter) 54 (1996) 11169-11186
7. G. Kresse, J. Furthmüller, (Universität Wien. Available via DIALOG. http://cms.mpi.univie.ac.at/vasp/vasp/vasp.html)
8. Kohanoff J., and Gidpoulos N.I. Density Functional Theory: Basics, New Applications (2003), John Wiley & sons, Ltd, Chichester
9. Dag S., Gulseren O., and Ciraci S. Chemical Physics Letters 380 (2003) 1-5
10. Monkhorst H.J., and Pack J.D. Physical Review B (Solid State) 13 (1976) 5188-5192
11. Kresse G., and Furthmüller J. Computational Materials Science 6 (1996) 15-50
12. Becke A.D., and Edgecombe K.E. Journal of Chemical Physics 92 (1990) 5397-5403
13. Silvi B., and Savin A. Nature 371 (1994) 683-686
14. Derycke V., Martel R., Appenzeller J., and Avouris P. Applied Physics Letters 80 (2002) 2773-2775
15. Seung-Hoon J., Louie S.G., and Cohen M.L. Physical Review Letters 85 (2000) 1710-1713
16. Giannozzi P. Applied Physics Letters 84 (2004) 3936-3937
17. Zhao J., Lu J.P., Han J., and Yang C.-K. Applied Physics Letters 82 (2003) 3746-3748
18. Franciosi A., and Van de Walle C.G. Surface Science Reports 25 (1996) 1-40