Effect of partial La filling on high-temperature thermoelectric properties of IrSb3-based skutterudite compounds

Journal of Electronic Materials

Volumn 33, Issue 10, 2004, Pages 1156-1160

  Kim, S W ^a,b   Kimura, Y ^a,b   Mishima, Y ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

IrSb3; Skutterudite; Thermoelectric

Indexed keywords

ELECTRONIC STRUCTURE; ELECTRONS; HALL EFFECT; HIGH TEMPERATURE EFFECTS; IONS; THERMAL CONDUCTIVITY OF SOLIDS;

CONDUCTION BANDS; IRSB3; RIETVELD ANALYSIS; SKUTTERUDITE;

THERMOELECTRICITY;

EID: 7244240692     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0117-7     Document Type: Conference Paper

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