Low-pressure sublimation epitaxy of A1N films - Growth and characterization

Vacuum

Volumn 76, Issue 2-3, 2004, Pages 143-146

  Beshkova, M ^a   Zakhariev, Z ^a   Abrashev, M V ^b   Birch, E ^c   Kakanakova, A ^c   Yakimova, R ^c  

^a INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

^b UNIVERSITY OF SOFIA   (Bulgaria)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Alm; Morphology; Raman; Sublimation; XRD

Indexed keywords

ALUMINUM NITRIDE; CONDENSATION; FILM GROWTH; LIGHT REFLECTION; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SPECTRUM ANALYSIS; THERMAL EFFECTS;

MICRO-RAMAN SPECTROSCOPY; SUBLIMATION EPITAXY; SUBLIMATION TRANSPORT;

EPITAXIAL GROWTH;

EID: 7244226341     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.07.052     Document Type: Conference Paper

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