Influence of point defects in KTaO3 on low-temperature dielectric relaxation

Journal of the European Ceramic Society

Volumn 30, Issue 4, 2010, Pages 941-946

  Axelsson, Anna Karin ^a   Valant, Matjaz ^a,b   Alford, Neil McN ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF NOVA GORICA   (Slovenia)

Author keywords

Defects; Dielectric properties; Ferroelectric properties; Polar domains; Tantalates

Indexed keywords

ALIOVALENTS; DIELECTRIC BEHAVIOR; FERROELECTRIC PROPERTIES; FERROELECTRIC PROPERTY; LINEAR RESPONSE; LOW TEMPERATURES; MICROWAVE DIELECTRICS; RAMAN SPECTRA; SUBSTITUTION MECHANISMS; SYMMETRY-BREAKING;

FERROELECTRICITY; MANGANESE; MANGANESE COMPOUNDS; POINT DEFECTS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SINTERING; SODIUM;

DEFECTS;

EID: 72249115816     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2009.09.034     Document Type: Article

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