EIS characterization of tantalum and niobium oxide films based on a modification of the point defect model

Journal of Electroanalytical Chemistry

Volumn 638, Issue 1, 2010, Pages 51-58

  Cabrera Sierra, Román ^a   Hallen, José Manuel ^a   Vazquez Arenas, Jorge ^b   Vázquez, Gerardo ^c   González, Ignacio ^c  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b UNIVERSITY OF WATERLOO   (Canada)

^c UNIVERSIDAD AUTÓNOMA METROPOLITANA   (Mexico)

Author keywords

Blistering; Hydroxyl vacancy; Oxygen vacancy; Passive films; PDM

Indexed keywords

DEFECTS; DIFFUSION; ELECTROCHEMICAL CORROSION; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ELECTROCHEMICAL PROPERTIES; FLUORINE CONTAINING POLYMERS; NIOBIUM; NIOBIUM COMPOUNDS; OXIDE FILMS; OXYGEN; PASSIVATION; POINT DEFECTS; TANTALUM; TRANSFER FUNCTIONS; VACANCIES;

ALKALINE CONDITIONS; BLISTERING; DIFFUSION COEFFICIENTS; KOH SOLUTION; MOLECULAR HYDROGEN; N-TYPE SEMICONDUCTORS; NIOBIUM OXIDES; PASSIVE FILMS; PASSIVE MATERIALS; PASSIVE PROPERTIES; POINT DEFECT MODELS; QUANTITATIVE CHARACTERIZATION; RESEARCH GROUPS;

OXYGEN VACANCIES;

EID: 72149102160     PISSN: 15726657     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jelechem.2009.10.021     Document Type: Article

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