High-power pure blue InGaN laser diodes

IEICE Transactions on Electronics

Volumn E92-C, Issue 2, 2009, Pages 194-197

  Michiue, Atsuo ^a   Miyoshi, Takashi ^a   Kozaki, Tokuya ^a   Yanamoto, Tomoya ^a   Nagahama, Shin Ichi ^a   Mukai, Takashi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

Blue LD; GaN; High power laser; InGaN

Indexed keywords

HIGH POWER LASERS;

BLUE LD; CONTINUOUS WAVE OPERATION; ESTIMATED LIFETIME; FORWARD CURRENTS; INGAN; INGAN LASER DIODES; OUTPUT POWER; WALLPLUG EFFICIENCY;

GALLIUM NITRIDE;

EID: 72049106437     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E92.C.194     Document Type: Article

References (2)

1. T. Miyoshi, T. Kozaki, T. Yanamoto, Y. Fujimura, S. Nagahama, and T. Mukai, "GaN-based high power blue laser diodes for display applications, " SID2006 Digest, pp. 1915-1917, 2006.
2. K. Motoki, T. Okahisa, N. Matsumoto, M. Matsushima, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, T. Hirano, M. Nakayama, S. Nakahata, M. Ueno, D. Hara, Y. Kumagai, A. Koukitu, and H. Seki, "Preparation of larg freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate, " Jpn. J. Appl. Phys., vol. 40, pp. L140-L143, 2001.