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Volumn 9, Issue 12, 2009, Pages 4548-4552

Photocurrent induced by nonradiative energy transfer from nanocrystal quantum dots to adjacent silicon nanowire conducting channels: Toward a new solar cell paradigm

Author keywords

[No Author keywords available]

Indexed keywords

ADJACENT LAYERS; CHARGE TRANSPORT; CONDUCTING CHANNELS; EXCITONIC SOLAR CELLS; HIGH MOBILITY; LEAD SULFIDE; NANOCRYSTAL QUANTUM DOTS; NON-RADIATIVE; NONRADIATIVE ENERGY TRANSFER; PHOTOCURRENT MEASUREMENT; PHOTON ABSORBERS; RESONANT ENERGY TRANSFER; SILICON NANOWIRES; TIME-RESOLVED;

EID: 71949123734     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl903104k     Document Type: Article
Times cited : (77)

References (13)
  • 5
    • 71949114129 scopus 로고    scopus 로고
    • The quantum yield of the QDs was measured by comparison to IR125 dye of known quantum yield ∼11-13% at 700 nm excitation
    • The quantum yield of the QDs was measured by comparison to IR125 dye of known quantum yield ~11-13% at 700 nm excitation.
  • 6
    • 71949121403 scopus 로고    scopus 로고
    • The main contribution to the width of the IRF, we suspect, is due to the high frequency impedance of the thin lead wires connecting the contact pads to the chip holder and the coaxial cable.
    • The main contribution to the width of the IRF, we suspect, is due to the high frequency impedance of the thin lead wires connecting the contact pads to the chip holder and the coaxial cable.
  • 7
    • 71949098462 scopus 로고    scopus 로고
    • -3, PbS QD layer thickness ∼200 nm, angle of incident for 800 nm excitation laser light ∼45°
    • -3, PbS QD layer thickness ∼200 nm, angle of incident for 800 nm excitation laser light ∼45°.
  • 9
    • 71949111072 scopus 로고    scopus 로고
    • -2.
    • -2.
  • 11
    • 0003760432 scopus 로고    scopus 로고
    • Silicon nanowire absorption is calculated using bulk silicon dielectric function taken from, (Emis Datareview Series, No. 20); Hull, R., Ed.; INSPEC: London
    • Silicon nanowire absorption is calculated using bulk silicon dielectric function taken from Properties of Crystalline Silicon, (emis Datareview series, No. 20); Hull, R. , Ed.; INSPEC: London, 1999.
    • (1999) Properties of Crystalline Silicon


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.