Room temperature piezoelectric displacement detection via a silicon field effect transistor

Applied Physics Letters

Volumn 95, Issue 23, 2009, Pages

  Mahboob, I ^a   Nishiguchi, K ^a   Fujiwara, A ^a   Yamaguchi, H ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVELY COUPLED; DISPLACEMENT DETECTION; GAAS; MECHANICAL MOTIONS; OPTIMAL POINTS; ROOM TEMPERATURE; ROOM TEMPERATURE DETECTION;

ELECTRON GAS; FIELD EFFECT TRANSISTORS; MESFET DEVICES; SILICON;

TWO DIMENSIONAL ELECTRON GAS;

EID: 71949094712     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3271525     Document Type: Article

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