Ge on Si p-i-n photodiodes for a Bit rate of up to 25 Gbit/s

European Conference on Optical Communication, ECOC

Volumn , Issue , 2009, Pages

  Klinger, S ^a   Grozing M ^a   Zaoui, W Sfar ^a   Berroth, M ^a   Kaschel, M ^a   Oehme, M ^a   Kasper, E ^a   Schulze, J ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

1550 NM; BIT ERROR RATIOS; BIT RATES; ON-WAFER; OUTPUT SIGNAL; PIN PHOTODIODE; PSEUDO RANDOM BIT SEQUENCES; TIME DOMAIN;

GERMANIUM; PHOTODIODES; PHOTONICS; SILICON WAFERS;

OPTICAL COMMUNICATION;

EID: 71949087810     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Oehme and E. Kasper, Silicon Heterostructure Handbook, CRC, New York, p. 85 (2006).
2. M. Grözing et al., High-Speed ADC Building Blocks in 90 nm CMOS, 4th SODC'06 (2006).
3. S. J. Koester et al., IEEE JLT, 25, p. 46 (2007).
4. G. Masini et al., LEOS GFP'08, WB2 (2008).
5. S. Klinger et al., IEEE PTL, Ge on Si p-i-n Photodiodes With a 3 dB Bandwidth of 49 GHz, accepted for publication (2008).