Three-photon excited PL spectroscopy and photo-generated Frenkel defects in wide-bandgap layered CdI2 semiconductors

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 374, Issue 1, 2009, Pages 75-77

  Miah, M Idrish ^a,b  

^a GRIFFITH UNIVERSITY   (Australia)

^b UNIVERSITY OF CHITTAGONG   (Bangladesh)

Author keywords

Laser spectroscopy; nonlinear luminescence; Self trapped exciton; Semiconductor

Indexed keywords

ENERGY GAP; EXCITONS; LASER SPECTROSCOPY; PHOTOLUMINESCENCE SPECTROSCOPY; PHOTONS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR MATERIALS;

CRYSTAL TEMPERATURES; EXCITATION POWER DENSITY; FRENKEL DEFECTS; PL SPECTROSCOPY; POWER-LAW DEPENDENCES; SELF TRAPPED EXCITONS; THREE-PHOTON EXCITATION; WIDE BAND GAP;

WIDE BAND GAP SEMICONDUCTORS;

EID: 71949085150     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2009.10.019     Document Type: Article

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