Growth of Au thin film on Cu-modified Si(1 1 1) surface

Surface Science

Volumn 603, Issue 24, 2009, Pages 3400-3403

  Gruznev, D V ^a   Olyanich, D A ^a   Chubenko, D N ^a   Tsukanov, D A ^a,b   Borisenko, E A ^a   Bondarenko, L V ^a   Ivanchenko, M V ^a   Zotov, A V ^a,b,c   Saranin, A A ^a,b  

^a INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

^b FAR EASTERN FEDERAL UNIVERSITY   (Russian Federation)

^c VLADIVOSTOK STATE UNIVERSITY OF ECONOMICS AND SERVICE   (Russian Federation)

Author keywords

Electrical transport measurements; Gold; Metallic films; Scanning tunnelling microscopy

Indexed keywords

AMBIENT CONDITIONS; AU FILM; AU THIN FILMS; CONDUCTIVE ELEMENTS; CU SURFACES; ELECTRICAL CHARACTERISTIC; ELECTRICAL TRANSPORT MEASUREMENTS; ELECTRONIC DEVICE; FOUR-POINT PROBE MEASUREMENTS; GEOMETRICAL SIZES; GROWTH MODES; HIGH ELECTRICAL CONDUCTIVITY; ROOM TEMPERATURE; SCANNING TUNNELLING MICROSCOPY; SI (1 1 1); SURFACE CONDUCTIVITY;

COPPER; ELECTRIC CONDUCTIVITY; FILM GROWTH; GOLD COMPOUNDS; GOLD DEPOSITS; MEASUREMENTS; METALLIC FILMS; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE MORPHOLOGY; SURFACE RECONSTRUCTION; THIN FILMS; WIND TUNNELS;

GOLD;

EID: 71849100134     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.10.001     Document Type: Article

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