H2S gas sensitive indium-doped ZnO thin films: Preparation and characterization

Sensors and Actuators, B: Chemical

Volumn 143, Issue 1, 2009, Pages 164-170

  Badadhe, Satish S ^a   Mulla, I S ^a  

^a NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

Hydrogen sulfide sensor; Indium oxide; Spray pyrolysis; Thin film; Zinc oxide

Indexed keywords

AFM; DOPED ZNO; ELEMENTAL ANALYSIS; FAST RESPONSE; GAS RESPONSE; GLASS SUBSTRATES; HEXAGONAL WURTZITE STRUCTURE; HIGH QUALITY; HYDROGEN SULFIDE SENSOR; INDIUM CHLORIDE; INDIUM CONCENTRATION; INDIUM DOPING; INDIUM OXIDE; INDIUM-DOPED ZNO; INDIUM-DOPED ZNO THIN FILMS; OPERATING TEMPERATURE; POLYOXYETHYLENE; RECOVERY TIME; SCHERRER FORMULA; SEM; SPRAY-PYROLYSIS TECHNIQUES; TEM; TRAP STATE DENSITY; XPS; XRD; ZINC ACETATE;

ATOMIC FORCE MICROSCOPY; CHLORINE COMPOUNDS; CRYSTAL STRUCTURE; CRYSTALLITE SIZE; DOPING (ADDITIVES); ETHERS; FILM PREPARATION; GAS SENSING ELECTRODES; GASES; HYDROGEN SULFIDE; INDIUM; MORPHOLOGY; ORGANOMETALLICS; POLYETHYLENE GLYCOLS; POLYETHYLENE OXIDES; SEMICONDUCTING ZINC COMPOUNDS; SENSORS; SULFUR DETERMINATION; SURFACE ACTIVE AGENTS; THIN FILM DEVICES; THIN FILMS; ZINC; ZINC OXIDE; ZINC SULFIDE;

SPRAY PYROLYSIS;

EID: 71849099446     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.08.056     Document Type: Article

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