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Volumn 610, Issue 1, 2009, Pages 105-109
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On the efficiency of photon emission during electrical breakdown in silicon
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Author keywords
G APD; MPPC; Photon detector; Simulations; SiPM
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Indexed keywords
ABSORPTION LENGTH;
CROSSTALK EFFECT;
ELECTRICAL BREAKDOWN;
ENERGY DEPENDENCE;
GEIGER MODES;
OPTICAL CROSS-TALK;
PHOTON DETECTOR;
PHOTON EMISSIONS;
SILICON DIODES;
SIMULATION PACKAGES;
CROSSTALK;
DETECTORS;
DIODES;
ELECTRIC BREAKDOWN OF LIQUIDS;
MULTIPHOTON PROCESSES;
PARTICLE BEAMS;
PHOTODETECTORS;
SEMICONDUCTING SILICON COMPOUNDS;
UNCERTAINTY ANALYSIS;
PHOTONS;
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EID: 71749121009
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nima.2009.05.085 Document Type: Article |
Times cited : (37)
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References (12)
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