Effects of oxygen vacancy on ferroelectricity in Ba (Fe1/2 Nb1/2) O3 thin films grown by pulsed laser deposition

Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

  Zhang, Wei ^a   Li, Lei ^a   Chen, Xiang Ming ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; HIGH PRESSURE; OXYGEN DEFICIENCY; OXYGEN PRESSURE; PEROVSKITE STRUCTURES; REMNANT POLARIZATIONS; ROOM TEMPERATURE; SATURATED POLARIZATION; SI SUBSTRATES; SINGLE PHASE; TIO;

BARIUM; DEPOSITION; FERROELECTRICITY; LATTICE CONSTANTS; NIOBIUM; OXIDE MINERALS; OXYGEN; PEROVSKITE; POLARIZATION; PULSED LASER DEPOSITION; SILICON COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

OXYGEN VACANCIES;

EID: 71749101262     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3261744     Document Type: Article

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