Lifetime of high- k gate dielectrics and analogy with strength of quasibrittle structures

Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

  Le, Jia Liang ^a   Bažant, Zdeněk P ^a   Bazant, Martin Z ^b  

^a Northwestern University   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT STRESS; CONSTANT VOLTAGE; DIELECTRIC BREAKDOWN MODEL; DIELECTRIC BREAKDOWNS; HIGH-K GATE DIELECTRICS; LIFETIME TESTING; MECHANICAL STRENGTH; OXIDE LAYER; POWER LAW; PROBABILISTIC THEORY; RELIABILITY TESTING; SCALING EXPONENT; SEMICONDUCTOR ELECTRONIC DEVICES; STRUCTURAL FAILURE; WEAKEST-LINK MODELS; WEIBULL; WEIBULL MODULUS; WEIBULL STATISTICS;

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; FRACTURE MECHANICS; GATES (TRANSISTOR); MOS CAPACITORS; RELIABILITY THEORY; SAFETY ENGINEERING; WEIBULL DISTRIBUTION;

GATE DIELECTRICS;

EID: 71749083341     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3256225     Document Type: Article

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