Effects of W doping on the metal-insulator transition in vanadium dioxide film

Physica B: Condensed Matter

Volumn 405, Issue 2, 2010, Pages 663-667

  Chae, Byung Gyu ^a   Kim, Hyun Tak ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Electron correlation; Metal insulator transition; V1 x Wx O2 thin film; W doping

Indexed keywords

COULOMB REPULSIONS; FREE CARRIERS; IMPURITY LEVEL; INSULATOR-TO-METAL TRANSITIONS; METALLIC STATE; PREFERRED ORIENTATIONS; SOL-GEL METHODS; TRANSITION PROPERTIES; TRANSITION TEMPERATURE; VANADIUM DIOXIDE FILM; W-DOPING;

ACTIVATION ENERGY; CHARGE CARRIERS; CONDUCTION BANDS; CORUNDUM; DOPING (ADDITIVES); ELECTRON CORRELATIONS; ELECTRON DENSITY MEASUREMENT; ELECTRON MOBILITY; METAL INSULATOR BOUNDARIES; METALS; SEMICONDUCTOR INSULATOR BOUNDARIES; SOL-GEL PROCESS; THIN FILM DEVICES; THIN FILMS; VANADIUM;

METAL INSULATOR TRANSITION;

EID: 71549164604     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.09.083     Document Type: Article

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