Analog memory capacitor based on field-configurable ion-doped polymers

Applied Physics Letters

Volumn 95, Issue 21, 2009, Pages

  Lai, Qianxi ^a   Zhang, Lei ^a   Li, Zhiyong ^b   Stickle, William F ^c   Williams, R Stanley ^b   Chen, Yong ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

^c HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG MEMORIES; CONFIGURABLE; DOPANT CONCENTRATIONS; DOPED POLYMERS; LOW-VOLTAGE; NEUROMORPHIC CIRCUITS; NON-VOLATILE; SPECIFIC VALUES;

ANALOG CIRCUITS; CAPACITORS; DOPING (ADDITIVES); POLYMERS;

CAPACITANCE;

EID: 71549159133     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3268433     Document Type: Article

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