A comparison of forward and reverse bias operation in a Pt/nanostructured ZnO Schottky diode based hydrogen sensor

Procedia Chemistry

Volumn 1, Issue 1, 2009, Pages 979-982

  Yu, J ^a   Shafiei, M ^a   Breedon, M ^a   Kalantar zadeh, K ^a   Wlodarski, W ^a  

^a RMIT UNIVERSITY   (Australia)

Author keywords

comparison; forward bias; hydrogen; nanostructured; reverse bias; Schottky; ZnO

Indexed keywords

COMPARISON; FORWARD BIAS; NANO-STRUCTURED; REVERSE BIAS; SCHOTTKY; ZNO;

CARRIER CONCENTRATION; CHEMICAL SENSORS; DIODES; HYDROGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

PHASE INTERFACES;

EID: 71549144735     PISSN: 18766196     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.proche.2009.07.244     Document Type: Conference Paper

References (5)

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4. 3/SiC Schottky diode based hydrogen gas sensors. Applied Physics Letters 94 1 (2009) 013504
5. Sze S.M., and Kwok K.N. Semiconductor Devices: Physics and Technology. 3rd edition (2007), Wiley, New York