Defects and transport in Gd-doped BaPrO3

Journal of Electroceramics

Volumn 23, Issue 1, 2009, Pages 80-88

  Magrasó, Anna ^a   Haugsrud, Reidar ^b   Segarra, Mercè ^a   Norby, Truls ^b  

^a UNIVERSITY OF BARCELONA   (Spain)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

BaPrO3; Defect chemistry; P type conductivity; Perovskite; Point defects thermodynamics

Indexed keywords

CONCENTRATION CELLS; DEFECT CHEMISTRY; DEFECT REACTIONS; ELECTRICAL CONDUCTIVITY; ELECTRON HOLE; ELECTRONIC CONDUCTORS; FOUR-POINT; HIGH TEMPERATURE; IONIC CHARGE CARRIERS; ISOTOPE EFFECT; LOW TEMPERATURES; OXIDIZING CONDITIONS; P-TYPE; P-TYPE CONDUCTIVITY; PRACTICAL USE; THERMODYNAMIC PARAMETER; VAN DER PAUW TECHNIQUE; WET CONDITIONS;

CHEMICAL STABILITY; ELECTRIC BATTERIES; ELECTRIC CONDUCTIVITY; GADOLINIUM; ISOTOPES; OXIDE MINERALS; OXYGEN; OXYGEN VACANCIES; PEROVSKITE; SEMICONDUCTING FILMS; THERMODYNAMICS;

DEFECTS;

EID: 71449127553     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-008-9541-z     Document Type: Article

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